Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

• Abhishek Grewal,
• Yuqi Wang,
• Matthias Münks,
• Klaus Kern and
• Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

• to the modulation of the h-BN/Cu(111) interface state as we will show below. Despite the large change in electronic density of states and, thus, tip height between the data obtained at the two different sample biases, we observe a one-to-one correspondence between the simultaneously recorded Δf

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• bilayer [49]. The obtained result for Li-hBN is explained by the relatively high value of the electronic density of states at the Fermi level and the significant contribution to the pairing interaction from the inter-layer electron–phonon coupling [41]. This is due to the formation of characteristic bonds

• graphene, is unfavorable regarding superconducting states. The reason for this is that the van Hove singularity in the electronic density of states is considerably distant form the Fermi level [97]. This is not the case for a square lattice, where the van Hove singularity is very close or even at the Fermi

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• ratio of the Seebeck coefficient and the electrical conductivity along the x-axis and the y-axis at room temperature. Calculated (a) total electronic density of states (DOS) and projected DOS for (b) Mo and (c) O atoms of the MoO3 monolayer. The insets of (b) and (c) show the total charge density from

Synthesis and characterization of quaternary La(Sr)S–TaS₂ misfit-layered nanotubes

• Marco Serra,
• Erumpukuthickal Ashokkumar Anumol,
• Dalit Stolovas,
• Iddo Pinkas,
• Ernesto Joselevich,
• Reshef Tenne,
• Andrey Enyashin and
• Francis Leonard Deepak

Beilstein J. Nanotechnol. 2019, 10, 1112–1124, doi:10.3762/bjnano.10.111

• , and hence the lattice is compressed upon substitution of La by Sr atom. Any further Sr insertion leads to electron deficiency within the SrxLa1−xS–TaS2 misfits and to the weakening of cohesion between LaS and TaS2 layers. The electronic density-of-states (DOSs) for the misfits with a Sr content up to

Capillary force-induced superlattice variation atop a nanometer-wide graphene flake and its moiré origin studied by STM

• Loji K. Thomas and
• Michael Reichling

Beilstein J. Nanotechnol. 2019, 10, 804–810, doi:10.3762/bjnano.10.80

• an STM image is a map of the local electronic density of states (LDOS), such electronic modifications may be visualized in real space. When STM is operated at solid–liquid interfaces, the capillary force due to the meniscus formed between the tip and the surface could be utilized for mechanically

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• Moore’s law to reach the Si-crystallization limit of ca. 1.5 nm [15]. In our present work, we prove by hybrid-density functional theory (h-DFT) simulations and synchrotron-based long-term ultraviolet photoelectron spectroscopy (UPS) that usn-Si indeed can have a massive ΔE of their electronic density of

• states (DOS) when embedded in SiO2 or Si3N4. We use further h-DFT results of a Si-nanowire (NWire) covered in SiO2 and Si3N4 to examine the device behaviour of an undoped Si-NWire FET based solely on CMOS-compatible materials (e.g., Si, SiO2, Si3N4) using the nonequilibrium Green’s function (NEGF

Inverse proximity effect in semiconductor Majorana nanowires

• Alexander A. Kopasov,
• Ivan M. Khaymovich and
• Alexander S. Mel'nikov

Beilstein J. Nanotechnol. 2018, 9, 1184–1193, doi:10.3762/bjnano.9.109

• resulting restrictions on the operation of Majorana-based devices. A strong paramagnetic effect for electrons entering the semiconductor together with spin–orbit coupling and van Hove singularities in the electronic density of states in the wire are responsible for the suppression of superconducting

Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• SiNR nanojunctions. Since the dI/dV spectrum essentially reflects the electronic density of states (DOS), we interpret the peak by comparing the dI/dV spectrum with the DOS spectra calculated for freestanding SiNR. The DFT studies have demonstrated that the geometric and electronic structures of SiNR

Charge transfer from and to manganese phthalocyanine: bulk materials and interfaces

• Florian Rückerl,
• Daniel Waas,
• Bernd Büchner,
• Martin Knupfer,
• Dietrich R. T. Zahn,
• Francisc Haidu,
• Torsten Hahn and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 1601–1615, doi:10.3762/bjnano.8.160

• . PES [37][38][39] is based on the photoelectric effect and provides insight into the valence-band electronic density of states as well as the binding energy and line shape of core levels, which give information about the composition of the sample and the chemical state (e.g., valency) of the atoms or

Can molecular projected density of states (PDOS) be systematically used in electronic conductance analysis?

• Tonatiuh Rangel,
• Gian-Marco Rignanese and
• Valerio Olevano

Beilstein J. Nanotechnol. 2015, 6, 1247–1259, doi:10.3762/bjnano.6.128

• lowest unoccupied molecular orbital (LUMO), or the next LUMO (LUMO+1), etc.). Then, the total electronic density of states (DOS) is decomposed into the projected density of states (PDOS) associated with each different MO. Finally, by directly comparing the conductance profile, , with the various PDOS

Structural and thermoelectric properties of TMGa₃ (TM = Fe, Co) thin films

• Sebastian Schnurr,
• Ulf Wiedwald,
• Paul Ziemann,
• Valeriy Y. Verchenko and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 461–466, doi:10.3762/bjnano.4.54

• sharp features in the electronic density of states (DOS) close to the Fermi level, which are expected to be quite beneficial for an enhanced thermoelectric response [5][6]; large Seebeck coefficients of −350 μV/K [7] or even −563 μV/K [8] at room temperature were reported for bulk FeGa3. Recently, we

• found the existence of an unlimited solid solution between the isostructural intermetallics FeGa3 and CoGa3 [9]. With an increasing cobalt content in the Fe1−xCoxGa3 solid solution, the Fermi level shifts up to the conduction band and crosses peaks of high electronic density of states, ultimately

• thermal conductivities may be of advantage in combination with reasonable high electrical conductivities. While the Seebeck coefficient is mostly dominated by asymmetric features of the electronic density of states N(E) around EF, σ and λ are influenced by both, electronic properties like N(EF) and the

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• a (25,25) nanotube. Experiments by Ruffieux et al. [38] compare hydrogen adsorption on C60 molecules, CNTs, and graphite to show that reactivity is increased with curvature. In our case we find that the local electronic density of states changes little for the atoms on the pristine bent graphene

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• composition ratio [Si]/[Pt] = 1 and 3/2 indicates a granular electronic density of states of the FEBID samples. The minimal resistivity of the [Si]/[Pt] = 3/2 sample provides evidence that the intergranular tunnel-coupling strength is largest for this sample. On the other hand, from the TEM measurements no

• special microstructural feature, such as re-entrant crystallization of the granules, has been observed. It thus remains an unresolved issue, whether the granular electronic density of states is indeed indicative of the formation of an amorphous precursor of the metastable, hexagonal and superconducting

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

• Luca Camilli,
• Manuela Scarselli,
• Silvano Del Gobbo,
• Paola Castrucci,
• Eric Gautron and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

• responsible for the generation of photocurrent in SWCNTs. Since in the electronic density of states of MWCNTs such a singularity is still present [9], we think that the experimentally measured shoulder should have the same origin. Shyu and Lin report a complete calculation of these energy-loss features

Nonconservative current-induced forces: A physical interpretation

• Tchavdar N. Todorov,
• Daniel Dundas,
• Anthony T. Paxton and
• Andrew P. Horsfield

Beilstein J. Nanotechnol. 2011, 2, 727–733, doi:10.3762/bjnano.2.79

• the electronic density of states, evaluated at the Fermi level μ; Δ(Q) is the nonequilibrium part of the one-electron density matrix (that is, the difference between the steady-state current-carrying density matrix and the equilibrium density matrix); finally, (Q) is the force operator where Ĥe(Q) is

Deconvolution of the density of states of tip and sample through constant-current tunneling spectroscopy

• Holger Pfeifer,
• Berndt Koslowski and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 607–617, doi:10.3762/bjnano.2.64

• property that can be accessed by STS is the local electronic density of states (LDOS). For that purpose, the applied tunneling bias, V, is ramped while the probe–sample separation is kept constant (commonly denoted as I–V spectroscopy) [1][3]. However, determination of the sample LDOS from such a

Terthiophene on Au(111): A scanning tunneling microscopy and spectroscopy study

• Berndt Koslowski,
• Anna Tschetschetkin,
• Norbert Maurer,
• Elena Mena-Osteritz,
• Peter Bäuerle and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 561–568, doi:10.3762/bjnano.2.60

• indicating an adsorption-induced dimensionality transition of the involved tunneling processes. Keywords: Au(111); electronic density of states; STM; STS; terthiophene; Introduction Because of their expedient properties and their diversity, oligo- and polythiophenes are among the most investigated organic